Title :
GaAs MESFET distributed baseband amplifier IC with allpass filter network
Author :
Kimura, S. ; Imai, Y. ; Kikuchi, H. ; Tokumitsu, M.
Author_Institution :
NTT Opt. Network Syst. Labs., Kanagawa, Japan
fDate :
10/29/1998 12:00:00 AM
Abstract :
A distributed baseband amplifier integrated circuits (IC) which uses an allpass-filter configuration and three-dimensional transmission lines is described. An IC fabricated using 0.1 μm gatelength GaAs MESFETs has a 0 to >62.5 GHz bandwidth with a flat gain of 10 dB. Its group delay variation in the 0-50 GHz band is only 12.4 ps. This is ~17 ps smaller than that of a conventional distributed baseband amplifier IC
Keywords :
III-V semiconductors; MESFET integrated circuits; all-pass filters; distributed amplifiers; field effect MIMIC; gallium arsenide; wideband amplifiers; 0.1 micron; 10 dB; 3D transmission lines; 62.5 GHz; GaAs; GaAs MESFET amplifier IC; allpass filter network; broadband amplifier; distributed baseband amplifier IC;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981510
