Title :
10.9 W continuous wave optical power from 100 μm aperture InGaAs/AlGaAs (915 nm) laser diodes
Author :
He, Xiangning ; SRINIVASAN, SUDARSHAN ; Wilson, Stuart ; Mitchell, Cathryn ; Patel, Rahul
Author_Institution :
Opto Power Corp., Tucson, AZ
fDate :
10/29/1998 12:00:00 AM
Abstract :
10.9 W continuous wave (CW) optical power is achieved from a 100 μm aperture InGaAs/AlGaAs (915 nm) laser diode. No catastrophic optical mirror damage was observed. Diodes also demonstrated strong resistance to thermal damage. Power conversion efficiency as high as 59% has been measured for a 2 mm long laser diode. Reliability studies on 40 μm aperture laser diodes have been carried out for over 10 kh at ~24 mW/μm for a total output power of 950 mW under CW condition. Under these conditions, the extrapolated lifetime of the diodes is 56 kh
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser transitions; semiconductor device reliability; semiconductor lasers; 10.9 W; 100 micron; 2 mm; 40 micron; 56E3 hr; 59 percent; 915 nm; 950 mW; CW optical power; InGaAs-AlGaAs; InGaAs/AlGaAs LD; continuous wave optical power; laser diode lifetime; reliability study; thermal damage resistance;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981488
