Title :
GaAsSb: A novel material for 1.3 μm VCSELs
Author :
Anan, T. ; Nishi, K. ; Sugou, S. ; Yamada, M. ; Tokutome, K. ; Gomyo, A.
Author_Institution :
Opt. Interconnection Lab., NEC Corp., Ibaraki, Japan
fDate :
10/29/1998 12:00:00 AM
Abstract :
GaAsSb quantum wells (QWs) on GaAs substrate are proposed for the active layer of 1.3 μm VCSELs. High-quality GaAsSb QWs showed intense 1.32 μm photoluminescence at room temperature. Room-temperature pulsed operation of GaAsSb/GaAs broad stripe laser diodes at a wavelength of 1.22 μm was demonstrated for the first time
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; photoluminescence; quantum well lasers; surface emitting lasers; 1.22 micrometre; 1.32 micrometre; GaAsSb-GaAs; III-V semiconductors; VCSELs; broad stripe laser diodes; intense photoluminescence; quantum wells; room-temperature pulsed operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981451
