Title :
Matching properties of MOS transistors
Author :
Pelgrom, Marcel J M ; Duinmaijer, Aad C.J. ; Welbers, Anton P G
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
fDate :
10/1/1989 12:00:00 AM
Abstract :
The matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured. Improvements to the existing theory are given, as well as extensions for long-distance matching and rotation of devices. Matching parameters of several processes are compared. The matching results have been verified by measurements and calculations on several basic circuits.
Keywords :
MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; MOS transistors; current factor; long-distance matching; matching properties; model; rotation of devices; substrate factor; threshold voltage; transistor area; transistor orientation; transistor separation; Analog-digital conversion; Capacitors; Circuits; Current measurement; Digital circuits; Integral equations; Limiting; MOSFETs; Random access memory; Read-write memory; Threshold voltage;
Journal_Title :
Solid-State Circuits, IEEE Journal of
DOI :
10.1109/JSSC.1989.572629
