DocumentCode
1467526
Title
Matching properties of MOS transistors
Author
Pelgrom, Marcel J M ; Duinmaijer, Aad C.J. ; Welbers, Anton P G
Author_Institution
Philips Res. Labs., Eindhoven, Netherlands
Volume
24
Issue
5
fYear
1989
fDate
10/1/1989 12:00:00 AM
Firstpage
1433
Lastpage
1439
Abstract
The matching properties of the threshold voltage, substrate factor, and current factor of MOS transistors have been analyzed and measured. Improvements to the existing theory are given, as well as extensions for long-distance matching and rotation of devices. Matching parameters of several processes are compared. The matching results have been verified by measurements and calculations on several basic circuits.
Keywords
MOS integrated circuits; insulated gate field effect transistors; semiconductor device models; MOS transistors; current factor; long-distance matching; matching properties; model; rotation of devices; substrate factor; threshold voltage; transistor area; transistor orientation; transistor separation; Analog-digital conversion; Capacitors; Circuits; Current measurement; Digital circuits; Integral equations; Limiting; MOSFETs; Random access memory; Read-write memory; Threshold voltage;
fLanguage
English
Journal_Title
Solid-State Circuits, IEEE Journal of
Publisher
ieee
ISSN
0018-9200
Type
jour
DOI
10.1109/JSSC.1989.572629
Filename
572629
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