DocumentCode :
1467587
Title :
Quantum confined Stark effects of heavy-hole confined states in In 0.53Ga0.47As/In0.52Al0.48As multiquantum well structure using photocurrent spectroscopy
Author :
Tanaka, K. ; Kotera, N. ; Nakamura, H.
Author_Institution :
Dept. of Comput. Sci. & Electron., Kyushu Inst. of Technol., Iizuka, Japan
Volume :
34
Issue :
22
fYear :
1998
fDate :
10/29/1998 12:00:00 AM
Firstpage :
2163
Lastpage :
2164
Abstract :
Photocurrents in an In0.53Ga0.47As/In0.52Al0.48 As multiquantum well structure containing 10 nm wide wells were measured at room temperature. The spectra showed fine steplike structures accented by exciton peaks of interband transitions. The exciton peaks of field-hole transitions responded very sensitively to the electric field due to the quantum confined Stark effect. The energies of the experimental confined states of the heavy-hole extrapolated from the larger electric field were roughly proportional to the squares of quantum numbers. The nonparabolicity of an effective mass of the heavy-hole was surmised to be very small in a direction normal to the well plane
Keywords :
III-V semiconductors; aluminium compounds; effective mass; excitons; gallium arsenide; indium compounds; photoconductivity; quantum confined Stark effect; semiconductor quantum wells; In0.53Ga0.47As-In0.52Al0.48 As; In0.53Ga0.47As/In0.52Al0.48 As multiquantum well; effective mass; electric field; exciton; field-hole transition; heavy hole confined state; interband transition; photocurrent spectroscopy; quantum confined Stark effect; quantum number;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981189
Filename :
741380
Link To Document :
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