DocumentCode :
1467622
Title :
Accurate closed-form expression for sheet carrier density calculations in modulation-doped heterostructures
Author :
Castro, F. ; Nabet, Bahram ; Culp, Jim
Author_Institution :
Dept. of Electr. & Comput. Eng., Drexel Univ., Philadelphia, PA
Volume :
34
Issue :
22
fYear :
1998
fDate :
10/29/1998 12:00:00 AM
Firstpage :
2170
Lastpage :
2171
Abstract :
An accurate expression for sheet carrier density (ns) calculations in modulation-doped heterostructures is developed from a nonlinear model of the Fermi potential variation with ns. This closed-form expression produces numerical results that agree well with computer simulations of low sheet carrier density AlGaAs/GaAs heterostructures at 300 K
Keywords :
III-V semiconductors; aluminium compounds; carrier density; gallium arsenide; high electron mobility transistors; p-n heterojunctions; photodetectors; semiconductor device models; 300 K; AlGaAs-GaAs; Fermi potential variation; III-V semiconductors; MODFETs; closed-form expression; modulation-doped heterostructures; nonlinear model; photodetectors; sheet carrier density calculations;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981450
Filename :
741389
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1467622
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