DocumentCode
1467629
Title
Direct integration of solid state stress sensors with single crystal microelectromechanical systems
Author
Haronian, D.
Author_Institution
Fac. of Eng., Tel Aviv Univ., Israel
Volume
34
Issue
22
fYear
1998
fDate
10/29/1998 12:00:00 AM
Firstpage
2171
Lastpage
2173
Abstract
Unique displacement sensors made of pn diodes and MOS transistors are integrated at the root of silicon micro-beams. Displacement induced stress excites the sensors by modulating the silicon bandgap energy. Owing to their simplicity, these sensors are useful for microelectromechanical systems requiring a massive number of sensors for multiple degree of freedom sensing
Keywords
MOSFET; displacement measurement; elemental semiconductors; energy gap; microsensors; semiconductor diodes; silicon; stress measurement; MOS transistor; Si; bandgap energy; direct integration; displacement sensor; pn diode; silicon microbeam; single crystal microelectromechanical system; solid state stress sensor;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981452
Filename
741390
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