Title :
Direct integration of solid state stress sensors with single crystal microelectromechanical systems
Author_Institution :
Fac. of Eng., Tel Aviv Univ., Israel
fDate :
10/29/1998 12:00:00 AM
Abstract :
Unique displacement sensors made of pn diodes and MOS transistors are integrated at the root of silicon micro-beams. Displacement induced stress excites the sensors by modulating the silicon bandgap energy. Owing to their simplicity, these sensors are useful for microelectromechanical systems requiring a massive number of sensors for multiple degree of freedom sensing
Keywords :
MOSFET; displacement measurement; elemental semiconductors; energy gap; microsensors; semiconductor diodes; silicon; stress measurement; MOS transistor; Si; bandgap energy; direct integration; displacement sensor; pn diode; silicon microbeam; single crystal microelectromechanical system; solid state stress sensor;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981452
