Title :
Direct optical phase modulation in semiconductor laser amplifier
Author_Institution :
British Telecom Res. Labs., Ipswich, UK
fDate :
5/11/1989 12:00:00 AM
Abstract :
Efficient optical phase modulation in a nearly travelling-wave semiconductor laser amplifier, via modulation of the amplifier injection current, is proposed and demonstrated. Using a 500 mu m-long GaInAsP buried heterostructure amplifier and a 1530 nm optical carrier, phase deviations of the order of 0.1 rad/mA are obtained for modulation frequencies in the range 100 MHz to 2 GHz.
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; optical modulation; phase modulation; semiconductor junction lasers; 100 MHz to 2 GHz; 1530 nm; GaInAsP; III-V semiconductors; amplifier injection current; buried heterostructure; direct modulation; modulation frequencies; optical carrier; optical phase modulation; semiconductor laser amplifier; travelling wave amplifier;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890460
