• DocumentCode
    1467643
  • Title

    Scaling of maximum capacitance of MOSFET with ultra-thin oxide

  • Author

    Ricco, Bruno

  • Volume
    34
  • Issue
    22
  • fYear
    1998
  • fDate
    10/29/1998 12:00:00 AM
  • Firstpage
    2175
  • Lastpage
    2176
  • Abstract
    The maximum capacitance of a polysilicon-gate MOSFET against oxide thickness is studied for different gate and substrate doping levels. It is found that substrate doping contributes to transistor capacitance degradation, imposing a limit on the lower voltage operation for sub-0.1 μm CMOS technologies
  • Keywords
    MOSFET; capacitance; 0.1 micron; capacitance; gate doping; low voltage CMOS technology; polysilicon gate MOSFET; scaling; substrate doping; ultrathin oxide;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981471
  • Filename
    741392
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1467643