Title :
Large on/off current ratio and low leakage current poly-Si TFTs with multichannel structure
Author :
Unagami, Takashi ; Kogure, Osamu
Author_Institution :
NTT Electr. Commun. Labs., Tokyo, Japan
fDate :
11/1/1988 12:00:00 AM
Abstract :
High-performance thin-film transistors (TFTs) have been fabricated on a quartz substrate by the use of a laser-annealed multiple-strip-structure poly-Si film as a semiconductor. By recrystallization of a multiple-strip-structure poly-Si with CW-Ar laser, the carrier trap density of poly-Si can be reduced to obtain the preferential characteristics of a TFT. So, these poly-Si TFTs have n-channel enhancement-mode characteristics with threshold voltage as low as 0.4 V and large transconductance. Furthermore, a very large ON/OFF current ratio is obtained as eight orders of magnitude and the leakage current between the source and the drain is revealed to be as low as ~10 -13 A
Keywords :
elemental semiconductors; laser beam annealing; leakage currents; silicon; thin film transistors; 0.4 V; 10-13 A; Si-SiO2; SiO2; carrier trap density; laser recrystallisation; low leakage current; multichannel structure; multiple-strip-structure; n-channel enhancement-mode characteristics; on/off current ratio; polysilicon TFT; quartz substrate; threshold voltage; transconductance; Annealing; Grain boundaries; Laser modes; Leakage current; Power lasers; Semiconductor films; Semiconductor lasers; Silicon; Substrates; Thin film transistors;
Journal_Title :
Electron Devices, IEEE Transactions on
