Title :
High speeds in a single chip
Author :
Kasper, Erich ; Kissinger, Dietmar ; Russer, Peter ; Weigel, Robert
Author_Institution :
Inst. for Semicond. Technol., Univ. of Stuttgart, Stuttgart, Germany
Abstract :
This article reviews the development and breakthrough of SiGe technologies. SiGe HBTs with transit frequencies ft and maximum oscillation frequencies fmax above 300 GHz and monolithic integrated millimeter-wave circuits based on these HBTs have been developed by several groups. As this paper shows in the overview, the combination of active devices with passive planar structures, including antenna elements, allows single-chip realizations of complete millimeter-wave front-ends.
Keywords :
Ge-Si alloys; MIMIC; heterojunction bipolar transistors; semiconductor materials; HBT; SiGe; active devices; millimeter-wave front-ends; monolithic integrated millimeter-wave circuits; passive planar structures; Frequency; Germanium silicon alloys; Heterojunction bipolar transistors; Integrated circuit technology; Millimeter wave communication; Millimeter wave integrated circuits; Millimeter wave technology; Millimeter wave transistors; Photonic band gap; Silicon germanium;
Journal_Title :
Microwave Magazine, IEEE
DOI :
10.1109/MMM.2009.934691
