DocumentCode :
1467895
Title :
A Whole-Chip ESD-Protected 0.14-pJ/p-mV 3.1–10.6-GHz Impulse-Radio UWB Transmitter in 0.18- 
CMOS
Author :
Xin Wang ; Fan, Siqiang ; Tang, He ; Lin, Lin ; Liu, Jian ; Fang, Qiang ; Zhao, Hui ; Wang, Xin ; Yang, Li-wu ; Zhao, Bin
Author_Institution :
Dept of Electr. Eng., Univ. of California, Riverside, CA, USA
Volume :
59
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
1109
Lastpage :
1116
Abstract :
This paper presents the design of a low-power single-full-band (3.1-10.6 GHz) noncarrier impulse-radio ultra-wideband (UWB) transmitter (TX) implemented in a commercial 0.18-μm CMOS technology. This UWB TX features fifth-order Gaussian derivative pulse shaping, integrated binary phase-shift keying modulation and 2.5-kV whole-chip electrostatic discharge (ESD) protection. Measurement shows full function with a very small die size of 0.25 mm2, extremely low power consumption of 0.14 pJ/p-mV, and an ultrashort pulsewidth of 394 ps. This ESD-protected UWB TX has the potential to support wireless streaming for gigabit/second applications.
Keywords :
CMOS integrated circuits; Gaussian processes; electrostatic discharge; low-power electronics; phase shift keying; power consumption; pulse shaping; radio transmitters; ultra wideband communication; CMOS technology; binary phase-shift keying modulation; die size; fifth-order Gaussian derivative pulse shaping; frequency 3.1 GHz to 10.6 GHz; impulse-radio UWB transmitter; low power consumption; low-power single-full-band noncarrier impulse-radio ultra-wideband transmitter; size 0.18 mum; ultrashort pulsewidth; voltage 2.5 kV; whole-chip ESD-protection; whole-chip electrostatic discharge protection; Binary phase shift keying; Electrostatic discharge; FCC; Integrated circuits; Radio frequency; Testing; Binary phase-shift keying (BPSK); electrostatic discharge (ESD) protection; impulse radio (IR); transmitter (TX); ultra-wideband (UWB);
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/TMTT.2011.2114170
Filename :
5727930
Link To Document :
