Detection of a Nanoscale Hot Spot by Hot Carriers in a Poly-Si TFT Using Polydiacetylene-Based Thermoresponsive Fluorometry

Author

Choi, Ji-Min ; Choi, Sung-Jin ; Yarimaga, Oktay ; Yoon, Bora ; Kim, Jong-Man ; Choi, Yang-Kyu

Author_Institution

Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol. (KAIST), Daejeon, South Korea

Volume

58

Issue

5

fYear

2011

fDate

5/1/2011 12:00:00 AM

Firstpage

1570

Lastpage

1574

Abstract

The thermal distribution of polycrystalline-silicon (poly-Si) thin-film transistors (TFTs) with sizes close to the nanoregime is analyzed by means of a fluorescent nanothermographic imaging technique based on the heat-induced fluorescence feature of polydiacetylene (PDA) supramolecules. The direct detection of nanoscale hot spots generated by hot carriers in poly-Si TFTs is demonstrated with sufficient spatial resolution. The thermal information of poly-Si TFTs under operation is recorded in a PDA-embedded polyvinyl alcohol film in the fluorescence state. The proposed thermal analysis method for poly-Si TFTs overcomes the fundamental spatial resolution limitation of conventional infrared detection systems and guarantees nanoscale spatial resolution. This approach, which offers cost effectiveness, nontoxicity, and simplicity of calibration steps, can be useful for further analysis of the degradation mechanism and reliability issues of submicrometer poly-Si TFTs.

Keywords

elemental semiconductors; fluorescence; hot carriers; infrared spectra; semiconductor device reliability; silicon; thin film transistors; Si; calibration; fluorescence state; fluorescent nanothermographic imaging; heat-induced fluorescence; hot carriers; infrared detection; nanoscale hot spot; polySi TFT; polydiacetylene-based thermoresponsive fluorometry; polyvinyl alcohol film; reliability; thermal distribution; thin-film transistors; Degradation; Hot carriers; Imaging; Nanoscale devices; Spatial resolution; Thermal analysis; Thin film transistors; Fluorescent imaging; hot carrier; hot spot; polycrystalline silicon (poly-Si); polydiacetylene (PDA); reliability; thermal imaging; thin-film transistor (TFT);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2011.2116025

Filename

5727939