Title :
Pulsed radio frequency characterisation on 28 nm complementary metal–oxide semiconductor technology
Author :
Sahoo, Abhaya Kumar ; Fregonese, Sebastien ; Scheer, P. ; Celi, D. ; Juge, A. ; Zimmer, T.
Author_Institution :
Lab. IMS, Univ. de Bordeaux, Bordeaux, France
Abstract :
The influence of electrothermal behaviour on radio frequency (RF) performances of 28 nm bulk complementary metal-oxide semiconductor technology is examined. Biased continuous-wave RF and pulsed RF (applying different DC pulse and RF pulse width combinations) characterisations are performed within the 1-30 GHz frequency domain at room temperature and the transit frequency (fT) is extracted at 15 GHz frequency. It has been found that the degradation in fT on I/O devices is about 3 GHz because of the self-heating effect.
Keywords :
CMOS integrated circuits; UHF integrated circuits; microwave integrated circuits; complementary metal-oxide semiconductor; electrothermal behaviour; frequency 1 GHz to 30 GHz; pulsed radio frequency characterisation; self-heating effect; size 28 nm; temperature 293 K to 298 K;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.3634
