DocumentCode
1468370
Title
Stationary charge domain in GaAs MESFETs: dimensional and electrical characterisation
Author
Kretly, L.C. ; Giarola, A.J.
Author_Institution
Univ. Estadual de Campinas Fac. de Engenharia Eletrica, Brazil
Volume
25
Issue
13
fYear
1989
fDate
6/22/1989 12:00:00 AM
Firstpage
813
Lastpage
814
Abstract
Numerical results of the location, size and voltage associated with stationary dipole charge layers in GaAs MESFETs and their dependences on gate and drain bias are presented. The results suggest the need of more analytical work describing the domain characteristics for a better understanding of how the dipole charge layer influences GaAs MESFET operation.
Keywords
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor device models; GaAs; GaAs MESFET operation; dimensional characterisation; domain characteristics; drain bias; electrical characterisation; gate bias; models; semiconductors; stationary charge domain; stationary dipole charge layers;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890547
Filename
91774
Link To Document