DocumentCode :
1468457
Title :
Continuous room-temperature operation of optically pumped InGaAs/InGaAsP microdisk lasers
Author :
Thiyagarajan, S.M.K. ; Levi, A.F.J. ; Lin, C.K. ; Kim, I. ; Dapkus, P.D. ; Pearton, S.J.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
Volume :
34
Issue :
24
fYear :
1998
fDate :
11/26/1998 12:00:00 AM
Firstpage :
2333
Lastpage :
2334
Abstract :
Optically pumped InGaAs/InGaAsP multiquantum well microdisk lasers wafer-bonded to sapphire lase continuously at room temperature. A threshold pump power of Pth=1.1 mW at pump wavelength λ=0.85 μm is measured for a 4.5 μm diameter disk with lasing emission wavelength near λ=1.6 μm
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; optical pumping; quantum well lasers; 0.85 micrometre; 1.1 mW; 1.6 micrometre; 4.5 micron; InGaAs-InGaAsP; continuous room-temperature operation; lasing emission wavelength; multiquantum well lasers; optically pumped microdisk lasers; pump wavelength; threshold pump power;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19981639
Filename :
743032
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1468457
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