Theoretical model of frequency response of carrier and lattice temperatures with nonequilibrium optical phonons in semiconductor lasers

Author

Tsai, Chin-Yi ; Chen, Chih-Hsiung ; Sung, Tien-Li ; Tsai, Chin-Yao ; Rorison, J.M.

Author_Institution

Dept. of Electron. & Electr. Eng., De Montfort Univ., Leicester, UK

Volume

34

Issue

24

fYear

1998

fDate

11/26/1998 12:00:00 AM

Firstpage

2337

Lastpage

2339

Abstract

A theoretical model is presented that is capable of simultaneously simulating the frequency response of the carrier density, photon density, electron temperature, hole temperature, populations of nonequilibrium longitudinal and transverse optical (LO and TO) phonons at different wave vectors and lattice temperature under the modulation of a small-signal current in semiconductor lasers. The different roles of carrier and lattice heating in the static and dynamic responses of semiconductor lasers are investigated

Keywords

carrier density; frequency response; optical modulation; semiconductor device models; semiconductor lasers; carrier density; dynamic responses; electron temperature; frequency response; hole temperature; lattice heating; lattice temperatures; nonequilibrium longitudinal phonons; nonequilibrium optical phonons; photon density; semiconductor lasers; small-signal current; static responses; transverse optical phonons; wave vectors;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19981594

Filename

743035