Title :
Carrier-Transport-Limited Modulation Bandwidth in Distributed Reflector Lasers With Wirelike Active Regions
Author :
Takahashi, Daisuke ; Lee, SeungHun ; Shirao, Mizuki ; Shindo, Takahiko ; Shinno, Keisuke ; Amemiya, Tomohiro ; Nishiyama, Nobuhiko ; Arai, Shigehisa
Author_Institution :
Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan
fDate :
5/1/2012 12:00:00 AM
Abstract :
High-speed direct modulation capability was investigated in 1.55-μm GaInAsP/InP distributed reflector (DR) lasers with wirelike active regions in terms of carrier transport from GaInAsP optical confinement layers (OCLs) to the active regions. Theoretical analysis revealed strong dependence of the modulation bandwidth on the thickness of the OCLs and width of the wirelike active regions. To confirm this prediction, two DR lasers with OCLs of different thicknesses (120 and 40 nm) were fabricated and their 3-dB bandwidths (f3 dB) under small-signal modulation were compared. The device with the narrower OCL exhibited f3 dB exceeding 15 GHz and clear eye opening under 25 Gb/s modulation, whereas that with the thicker OCL had f3 dB of only 2 GHz. These results were in good agreement with the theoretical predictions.
Keywords :
distributed Bragg reflector lasers; optical modulation; semiconductor lasers; GaInAsP-InP; bit rate 25 Gbit/s; carrier transport limited modulation bandwidth; distributed reflector lasers; frequency 15 GHz; high-speed direct modulation capability; optical confinement layers; size 120 nm; size 40 nm; small-signal modulation; wavelength 1.55 mum; wirelike active regions; Bandwidth; Distributed feedback devices; Frequency modulation; Laser theory; Threshold current; Distributed reflector (DR) laser; high-speed modulation; low power consumption; semiconductor laser;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2012.2190822