Title :
Piezoresistive MEMS pressure sensors using Si, Ge, and SiC diaphragms: A VLSI layout optimization
Author :
Megalingam, Rajesh Kannan ; Lal, Lekshmi S.
Author_Institution :
Dept. of Electron. & Commun. Eng., Amrita Vishwa Vidyapeetham, Kollam, India
Abstract :
The work presented in this paper relates to optimizing the VLSI layout geometry of a Piezoresistive MEMS Pressure Sensors. MEMS is the technology of miniaturizing mechanical devices with the aid of Electrical support. The study is conducted through the analysis of diaphragms made out of semiconductor and insulator materials. The Piezoresistive property of materials are used here where the resistivity of the material changes on application of pressure. The optimal diaphragm shape is decided by studying the deflection, stress, and output voltage. Three different shapes are considered for the studies, Circular, Square, and Rectangular. The stress, deflection, and output voltage are analyzed using COMSOL Multiphysics software and the observed results are included in the paper.
Keywords :
VLSI; circuit optimisation; elemental semiconductors; germanium; integrated circuit layout; microsensors; piezoresistive devices; pressure sensors; silicon; silicon compounds; wide band gap semiconductors; COMSOL Multiphysics software; Ge; Si; SiC; VLSI layout optimization; electrical support; insulator materials; mechanical devices; optimal diaphragm shape; piezoresistive MEMS pressure sensors; piezoresistive property; semiconductor materials; Layout; Mechanical sensors; Shape; Silicon; Stress; Deflection; Diaphragm; MEMS; Piezoresistivity; Pressure; Stress;
Conference_Titel :
Communications and Signal Processing (ICCSP), 2014 International Conference on
Conference_Location :
Melmaruvathur
Print_ISBN :
978-1-4799-3357-0
DOI :
10.1109/ICCSP.2014.6949911
