Title :
Low frequency noise and screening effects in AlGaN/GaN HEMTs
Author :
Garrido, J.A. ; Calle, F. ; Munoz, Eugenio ; Izpura, I. ; Sánchez-Rojas, J.L. ; Li, R. ; Wang, K.L.
Author_Institution :
Dept. de Ingenieria Electron., ETSI Telecommun., Madrid, Spain
fDate :
11/26/1998 12:00:00 AM
Abstract :
Low frequency noise has been studied in Al0.15Ga0.85N/GaN high electron mobility transistors grown on sapphire substrates by metal organic vapour phase epitaxy. A strong dependence between the Hooge parameter αH and VGS, was found. A Hooge parameter as low as 5×10-4 was obtained at VGS=0 V. Mobility fluctuations produced by changes in the rate of trapping charge at dislocations are suggested to be the dominant 1/f noise mechanism, although screening effects by the channel electrons significantly reduce their effect on the 1/f noise properties
Keywords :
1/f noise; III-V semiconductors; aluminium compounds; electron mobility; electron traps; gallium compounds; microwave field effect transistors; microwave power transistors; power HEMT; semiconductor device noise; shielding; vapour phase epitaxial growth; 1/f noise mechanism; Al0.15Ga0.85N-GaN; HEMTs; Hooge parameter; channel electrons; dislocation charge trapping; low frequency noise; metal organic vapour phase epitaxy; mobility fluctuations; screening effects;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981597
