DocumentCode
1468636
Title
Neutron-Induced Multiple Bit Upsets on Two Commercial SRAMs Under Dynamic-Stress
Author
Rech, P. ; Galliere, J.-M. ; Girard, P. ; Griffoni, A. ; Boch, J. ; Wrobel, F. ; Saigné, F. ; Dilillo, L.
Author_Institution
Instituto de Informática, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil
Volume
59
Issue
4
fYear
2012
Firstpage
893
Lastpage
899
Abstract
We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4 Mbits and 32 Mbits when irradiated with neutrons. The devices were irradiated at TSL facility with QMN beams of energies from 50 MeV to 180 MeV. Experimental data demonstrate that the dynamic-stress increases SRAMs sensitivity as well as MBUs occurrence for both the memory types. We also show that both SEU and MBU cross section may depend on memory architecture and memory utilization.
Keywords
Error analysis; Field programmable gate arrays; Neutrons; Performance evaluation; Random access memory; Sensitivity; Stress; Multiple bit upset; SRAM; soft error rate;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/TNS.2012.2187218
Filename
6168809
Link To Document