Title :
Neutron-Induced Multiple Bit Upsets on Two Commercial SRAMs Under Dynamic-Stress
Author :
Rech, P. ; Galliere, J.-M. ; Girard, P. ; Griffoni, A. ; Boch, J. ; Wrobel, F. ; Saigné, F. ; Dilillo, L.
Author_Institution :
Instituto de Informática, Universidade Federal do Rio Grande do Sul (UFRGS), Porto Alegre, Brazil
Abstract :
We investigate the occurrence of Multiple Bit Upsets in commercial SRAMs of 4 Mbits and 32 Mbits when irradiated with neutrons. The devices were irradiated at TSL facility with QMN beams of energies from 50 MeV to 180 MeV. Experimental data demonstrate that the dynamic-stress increases SRAMs sensitivity as well as MBUs occurrence for both the memory types. We also show that both SEU and MBU cross section may depend on memory architecture and memory utilization.
Keywords :
Error analysis; Field programmable gate arrays; Neutrons; Performance evaluation; Random access memory; Sensitivity; Stress; Multiple bit upset; SRAM; soft error rate;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2012.2187218
