Title :
A Correlative Analysis Between Characteristics of FinFETs and SRAM Performance
Author :
Endo, Kazuhiko ; O´uchi, Shinichi ; Ishikawa, Yuki ; Liu, Yongxun ; Matsukawa, Takashi ; Sakamoto, Kunihiro ; Tsukada, Junichi ; Yamauchi, Hiromi ; Masahara, Meishoku
Author_Institution :
Nat. Inst. of Adv. Ind. Sci. & Technol., Tsukuba, Japan
fDate :
5/1/2012 12:00:00 AM
Abstract :
A correlation between the characteristics of the 30-nm LG fin-shaped field-effect transistors and the static random-access memory performance is precisely studied. By investigating an effect of the Vth variation to the static noise margin (SNM) variation of two different memory states of the storage node, it is revealed that the Vth variations of the pull-up, pull-down, and pass-gate transistors correlate with the SNM. Moreover, the contribution and the severity of each transistor variation to σSNM are clarified.
Keywords :
MOSFET; SRAM chips; integrated circuit noise; FinFET characteristics; SNM variation; SRAM performance; correlative analysis; fin-shaped field-effect transistors; pass-gate transistors; size 30 nm; static noise margin variation; static random-access memory performance; storage node; transistor variation; voltage variation effect; Correlation; FinFETs; Logic gates; Random access memory; Scanning electron microscopy; Semiconductor device measurement; Fin-shaped field-effect transistor (FinFET); noise margin; static random-access memory (SRAM); variability;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2188633
