Low-Frequency-Noise Investigation of n-Channel Bulk FinFETs Developed for One-Transistor Memory Cells

Author

Simoen, E. ; De Andrade, Maria Glória Caño ; Aoulaiche, M. ; Collaert, N. ; Claeys, Cor

Author_Institution

Interuniv. Micro-Electron. Center, Leuven, Belgium

Volume

59

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

1272

Lastpage

1278

Abstract

The low frequency (LF) noise has been studied in n-channel triple-gate bulk fin Field-Effect Transistors (FinFETs), which are developed for one-transistor (1T) memory applications. Significant variation in the noise spectral density has been observed, which is related to the random occurrence of excess Lorentzian components, associated with generation-recombination (GR) noise. Both gate-voltage-dependent and gate-voltage-independent GR noise peaks have been found, which are assigned to gate oxide traps or traps in the silicon fins, respectively. In addition, excess 1/f noise in weak inversion has sometimes been observed and is ascribed to surface-roughness fluctuations. Overall, the gate oxide quality seems to be the major contributor to the LF noise and not the channel and source-drain engineering investigated here.

Keywords

MOSFET; LF-noise investigation; Lorentzian components; gate-voltage-independent GR noise; generation-recombination noise; low-frequency-noise investigation; n-channel triple-gate bulk FinFET; n-channel triple-gate bulk fin field-effect transistors; noise spectral density; one-transistor memory cells; source-drain engineering; surface-roughness fluctuations; FinFETs; Logic gates; Low-frequency noise; Silicon; Bulk FinFETs; generation–recombination (GR) noise; low frequency (LF) noise; one-transistor (1T) memory;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2012.2186815

Filename

6168826