DocumentCode
1468822
Title
Improved dynamics and linewidth enhancement factor in strained-layer lasers
Author
Ghiti, A. ; O´Reilly, E.P. ; Adams, A.R.
Author_Institution
Dept. of Phys., Surrey Univ., Guildford, UK
Volume
25
Issue
13
fYear
1989
fDate
6/22/1989 12:00:00 AM
Firstpage
821
Lastpage
823
Abstract
Shows that a laser in which the active region consists of a strained-layer structure should have improved dynamics and noise characteristics. The authors find that the relaxation oscillation frequency is enhanced and the linewidth enhancement factor is reduced by strain.
Keywords
semiconductor junction lasers; improved dynamics; linewidth enhancement factor; noise characteristics; relaxation oscillation frequency; semiconductor lasers; strained-layer lasers; strained-layer structure;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19890553
Filename
91780
Link To Document