Effects of deep-level states on current/voltage characteristics of heteroepitaxial GaAs

Author

Das, K. ; Humphreys, T.P. ; Parikh, N.R. ; Posthill, J.B.

Author_Institution

Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

25

Issue

13

fYear

1989

fDate

6/22/1989 12:00:00 AM

Firstpage

823

Lastpage

824

Abstract

The first results pertaining to current/voltage measurements of Au contacts fabricated on molecular beam epitaxial GaAs films grown on (1012) sapphire and silicon-on-sapphire (SOS) substrates are presented. A simple analysis of the corresponding I/V characteristics indicates that the dominant transport mechanism in these films is space-charge-limited current conduction in the presence of deep-level states. The nature of these deep-level states appears to be sensitive to the type of crystallographic defects present in the GaAs heteroepitaxial layers.

Keywords

III-V semiconductors; deep levels; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor-metal boundaries; Au-GaAs-Al₂O₃; Au-GaAs-Si-Al₂O₃; GaAs heteroepitaxial layers; I/V characteristics; MBE; SOS; crystallographic defects; current/voltage characteristics; current/voltage measurements; deep-level states; heteroepitaxial GaAs; sapphire; semiconductors; space-charge-limited current conduction; transport mechanism;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19890554

Filename

91781