3.6-MHz linewidth 1.55-μm monomode vertical-cavity surface-emitting laser

Author

Signoret, P. ; Marin, F. ; Viciani, S. ; Belleville, G. ; Myara, M. ; Tourrenc, J.P. ; Orsal, B. ; Plais, A. ; Gaborit, F. ; Jacquet, J.

Author_Institution

CEM2, Univ. des Sci. et Tech. du Languedoc, Montpellier, France

Volume

13

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

269

Lastpage

271

Abstract

We report on high-resolution linewidth measurement of proton-implanted bottom-emitting InGaAsP long-wavelength vertical-cavity surface-emitting lasers (VCSELs) employing the heterodyne method. Devices with 35-μm active diameter exhibit record linewidths of 3.6 MHz and negligible extrapolated linewidth for infinite power, at room temperature. This result relies on the long-cavity-designed VCSEL. The linewidth enhancement factor is also determined: /spl alpha//spl ap/2.1.

Keywords

III-V semiconductors; gallium arsenide; gallium compounds; heterodyne detection; indium compounds; ion implantation; laser modes; laser transitions; quantum well lasers; spectral line breadth; 1.55 mum; 1.55-/spl mu/m monomode vertical-cavity surface-emitting laser; 35 mum; InGaAsP; active diameter; extrapolated linewidth; heterodyne method; high-resolution linewidth measurement; infinite power; linewidth enhancement factor; long-cavity-designed VCSEL; proton-implanted bottom-emitting InGaAsP long-wavelength vertical-cavity surface-emitting lasers; record linewidths; room temperature; Fiber lasers; Laser feedback; Laser modes; Laser tuning; Lenses; Optical feedback; Optical mixing; Surface emitting lasers; Temperature; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.917821

Filename

917821