High-temperature performance of InGaAs-InGaAlAs-InP 1.79-μm diode lasers grown in solid-source molecular-beam epitaxy

Author

Kuang, G.K. ; Bohm, G. ; Graf, N. ; Grau, M. ; Rosel, G. ; Meyer, R. ; Amann, M.-C.

Author_Institution

Walter Schottky Inst., Tech. Univ. Munchen, Garching, Germany

Volume

13

Issue

4

fYear

2001

fDate

4/1/2001 12:00:00 AM

Firstpage

275

Lastpage

277

Abstract

1.79-μm InGaAs-InGaAlAs strained-layer quantum-well diode lasers have been fabricated. A characteristic temperature of 72 K has been achieved. At a temperature as high as 100/spl deg/C, a continuous-wave output power of more than 6.5 mW per facet has been demonstrated with lasers using as-cleaved facets as mirrors.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; infrared sources; laser mirrors; laser transitions; molecular beam epitaxial growth; optical fabrication; quantum well lasers; 1.79 mum; 100 C; 6.5 mW; 72 K; InGaAs-InGaAlAs; InGaAs-InGaAlAs strained-layer quantum-well diode lasers; InGaAs-InGaAlAs-InP; InGaAs-InGaAlAs-InP 1.79-/spl mu/m diode lasers; as-cleaved facets; characteristic temperature; continuous-wave output power; high-temperature performance; laser mirrors; solid-source molecular-beam epitaxy; Absorption; Chemical lasers; Diode lasers; Doping profiles; Gas lasers; Optical refraction; Optical variables control; Quantum well lasers; Semiconductor lasers; Temperature;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.917823

Filename

917823