Title :
Active 220- and 325-GHz Frequency Multiplier Chains in an SiGe HBT Technology
Author :
Öjefors, Erik ; Heinemann, Bernd ; Pfeiffer, Ullrich R.
Author_Institution :
Inst. for High-Freq. & Commun. Technol., Univ. of Wuppertal, Wuppertal, Germany
fDate :
5/1/2011 12:00:00 AM
Abstract :
A 325-GHz ×18 frequency multiplier chain implemented in a fτ/fmax = 250 GHz/380 GHz evaluation SiGe heterojunction bipolar transistor technology is presented. The chain achieves a peak output power of -3 dBm and consists of a balanced doubler driven by two cascaded tripler stages. It operates from 317 to 328 GHz with a 0-dBm 18-GHz input signal and a 1.5-W power consumption. Additionally, 220- and 325-GHz doubler breakout circuits with integrated driver amplifiers are presented. The doublers reach an output power of -1 dBm at 220 GHz and -3 dBm at 325 GHz with a power dissipation of 630 and 420 mW, respectively.
Keywords :
Ge-Si alloys; amplifiers; cascade networks; driver circuits; frequency multipliers; heterojunction bipolar transistors; millimetre wave integrated circuits; HBT technology; SiGe; balanced doubler; cascaded tripler stage; doubler breakout circuit; driver amplifier; frequency 220 GHz; frequency 317 GHz to 328 GHz; frequency multiplier chains; heterojunction bipolar transistor; millimeter-wave integrated circuit; power 1.5 W; Driver circuits; Harmonic analysis; Heterojunction bipolar transistors; Loss measurement; Power generation; Power measurement; Silicon germanium; Frequency multipliers; heterojunction bipolar transistor (HBT); millimeter-wave integrated circuits; silicon; submillimeter waves;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2011.2114364