Title :
Radiation Exposure of Distributed-Feedback Lasers for Use in Atom Trapping and Atom Interferometry
Author :
Timmons, Brian ; Stoner, Richard E.
Author_Institution :
Charles Stark Draper Lab., Electro-Opt., Cambridge, MA, USA
fDate :
4/1/2011 12:00:00 AM
Abstract :
Semiconductor DFB lasers are compact, efficient, robust light sources suitable for use in laser trapping and cooling and for atom interferometry using alkali atoms. Two commercially available DFB lasers (LD-0852-0150-DFB, Eagleyard Photonics) emitting at 852 nm were subjected to gamma and flash x-ray (FXR) radiation, to a total dose of 200 krad (in two exposures) and a prompt dose of 1.2 krad per shot, respectively. We measured frequency shifts and output power before, during and after exposures with the lasers tuned to the Cs D2 resonance. Radiation induced frequency excursions were smaller than the Doppler broadened linewidth. Radiation induced output power losses were negligible in flash x-ray and 1.8 dB after each of the two 100 krad gamma exposures. These results demonstrate that spectroscopy-grade DFB lasers can survive and function in very adverse radiation environments, making possible the radiation-hard implementation of cold atom based clocks and atom interferometer inertial sensors.
Keywords :
Doppler broadening; X-ray effects; atom optics; distributed feedback lasers; gamma-ray effects; laser cooling; laser variables measurement; optical losses; radiation pressure; semiconductor lasers; Doppler broadened linewidth; atom interferometry; atom trapping; distributed feedback lasers; flash X-ray radiation; frequency shifts; gamma radiation; inertial sensors; laser cooling; laser trapping; output power; output power losses; radiation exposure; radiation induced frequency excursions; semiconductor DFB lasers; wavelength 852 nm; Frequency measurement; Frequency modulation; Laser feedback; Measurement by laser beam; Optical feedback; Power lasers; Temperature measurement; Gamma-ray effects; X-ray effects; radiation effects; semiconductor lasers;
Journal_Title :
Nuclear Science, IEEE Transactions on
DOI :
10.1109/TNS.2011.2105281