High-voltage CdSe-Ge TFT driver circuits for passive AC-TFEL displays

Author

De Vos, J. ; De Smet, H. ; De Cubber, A.M. ; Van Calster, A.

Author_Institution

Dept. of Electron. & Inf. Syst., Ghent Univ., Belgium

Volume

34

Issue

2

fYear

1999

fDate

2/1/1999 12:00:00 AM

Firstpage

228

Lastpage

232

Abstract

Since an electroluminescent display (ELD) is a capacitive display driven at high voltage, it is necessary to fabricate high-voltage, large-current drivers. It is shown that a 20-μm complementary CdSe-Ge thin-film transistor technology can be used to integrate the high-voltage section of the drive circuits on the substrate of an ELD. The realized column driver levels a 15 V CMOS signal up to a modulation voltage of 50 V. A novel tristate row driver circuit, which is based on the symmetric character of the thin-film transistor, handles row selecting voltages of about 200 V together with current pulses of approximately 100 mA. In this paper, the design, simulation, and measurement of these circuits are described. Technology problems due to high voltages were solved

Keywords

II-VI semiconductors; cadmium compounds; driver circuits; electroluminescent displays; elemental semiconductors; equivalent circuits; field effect integrated circuits; germanium; integrated circuit design; power integrated circuits; thin film transistors; 100 mA; 20 micron; 200 V; 50 V; CdSe:In; Ge:Cu; HV TFT driver circuits; capacitive display; column driver; complementary CdSe/Ge TFT technology; electroluminescent display; high-voltage driver circuits; large-current drivers; passive AC thin-film EL displays; thin-film transistor technology; tristate row driver circuit; CMOS technology; Circuit simulation; Displays; Driver circuits; Electroluminescent devices; Pulse circuits; Pulse modulation; Substrates; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Solid-State Circuits, IEEE Journal of

Publisher

ieee

ISSN

0018-9200

Type

jour

DOI

10.1109/4.743783

Filename

743783