• DocumentCode
    1469232
  • Title

    Room-temperature operation of AlGaAs/GaAs resonant tunnelling structures grown by metalorganic vapour-phase epitaxy

  • Author

    Schnell, R.D. ; Tews, H. ; Neumann, Robert

  • Author_Institution
    Siemens Res. Labs., Munchen, West Germany
  • Volume
    25
  • Issue
    13
  • fYear
    1989
  • fDate
    6/22/1989 12:00:00 AM
  • Firstpage
    830
  • Lastpage
    831
  • Abstract
    Reports improvements in resonant tunnelling through AlGaAs/GaAs double barrier quantum wells grown by metalorganic vapour-phase epitaxy. At room temperature peak-to-valley current ratios up to 2.4 and peak current densities of 1.9*104 A/cm2 are obtained.
  • Keywords
    aluminium compounds; gallium arsenide; semiconductor quantum wells; tunnel diodes; tunnelling; vapour phase epitaxial growth; AlGaAs-GaAs; MOVPE; double barrier quantum wells; improvements; metalorganic vapour-phase epitaxy; peak current densities; peak-to-valley current ratios; resonant tunnelling structures; room temperature operation; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890559
  • Filename
    91786
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1469232