DocumentCode :
1469232
Title :
Room-temperature operation of AlGaAs/GaAs resonant tunnelling structures grown by metalorganic vapour-phase epitaxy
Author :
Schnell, R.D. ; Tews, H. ; Neumann, Robert
Author_Institution :
Siemens Res. Labs., Munchen, West Germany
Volume :
25
Issue :
13
fYear :
1989
fDate :
6/22/1989 12:00:00 AM
Firstpage :
830
Lastpage :
831
Abstract :
Reports improvements in resonant tunnelling through AlGaAs/GaAs double barrier quantum wells grown by metalorganic vapour-phase epitaxy. At room temperature peak-to-valley current ratios up to 2.4 and peak current densities of 1.9*104 A/cm2 are obtained.
Keywords :
aluminium compounds; gallium arsenide; semiconductor quantum wells; tunnel diodes; tunnelling; vapour phase epitaxial growth; AlGaAs-GaAs; MOVPE; double barrier quantum wells; improvements; metalorganic vapour-phase epitaxy; peak current densities; peak-to-valley current ratios; resonant tunnelling structures; room temperature operation; semiconductors;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19890559
Filename :
91786
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1469232
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