Temperature Dependence of Avalanche Breakdown in InP and InAlAs

Author

Tan, Lionel Juen Jin ; Ong, Daniel Swee Guan ; Ng, Jo Shien ; Tan, Chee Hing ; Jones, Stephen K. ; Qian, Yahong ; David, John Paul Raj

Author_Institution

Dept. of Electron. & Electr. Eng., Univ. of Sheffield, Sheffield, UK

Volume

46

Issue

8

fYear

2010

Firstpage

1153

Lastpage

1157

Abstract

Simple analytical expressions for temperature coefficients of breakdown voltage of avalanche photodiodes (APDs) utilizing InP or InAlAs are reported. The work is based on measurements of temperature dependence of avalanche breakdown voltage in a series of InP and InAlAs diodes at temperatures between 20 and 375 K. While avalanche breakdown voltage becomes more temperature sensitive with avalanche region thickness for both materials, the InAlAs diodes are less sensitive to temperature changes compared to InP diodes.

Keywords

III-V semiconductors; avalanche breakdown; avalanche photodiodes; indium compounds; InAlAs; InP; avalanche breakdown voltage; avalanche photodiodes; avalanche region thickness; temperature 20 K to 375 K; temperature coefficient; Avalanche breakdown; Avalanche photodiodes; Breakdown voltage; Diodes; Indium compounds; Indium phosphide; Temperature dependence; Temperature measurement; Temperature sensors; Thickness measurement; Avalanche breakdown; InAlAs; InP; avalanche photodiode (APD); impact ionization; temperature dependence; tunnelling;

fLanguage

English

Journal_Title

Quantum Electronics, IEEE Journal of

Publisher

ieee

ISSN

0018-9197

Type

jour

DOI

10.1109/JQE.2010.2044370

Filename

5446447