• DocumentCode
    1469609
  • Title

    NAND/NOR logic circuit using single InP-based RTBT

  • Author

    Velling, P. ; Janssen, G. ; Auer, U. ; Prost, W. ; Tegude, F.J.

  • Author_Institution
    Solid-State Electron. Dept., Gerhard-Mereator-Univ., Duisburg, Germany
  • Volume
    34
  • Issue
    25
  • fYear
    1998
  • fDate
    12/10/1998 12:00:00 AM
  • Firstpage
    2390
  • Lastpage
    2392
  • Abstract
    Bias dependent NAND and NOR logic functions using a single InP-based resonant tunnelling bipolar transistor (RTBT) are presented. NAND and NOR functionality is experimentally demonstrated and compared to simulation results using HP MDS-software for the first time. The circuit benefits from the high breakdown voltage of the fabricated RTBT
  • Keywords
    III-V semiconductors; NAND circuits; NOR circuits; bipolar transistor circuits; bipolar transistors; indium compounds; resonant tunnelling transistors; HP MDS software; InP; InP RTBT; NAND logic circuit; NOR logic circuit; breakdown voltage; resonant tunnelling bipolar transistor; simulation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981649
  • Filename
    744003
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1469609