• DocumentCode
    1469699
  • Title

    Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy

  • Author

    Becouarn, L. ; Gerard, B. ; Brévignon, M. ; Lehoux, J. ; Gourde, Y. ; Lallier, E.

  • Author_Institution
    Lab. Central de Recherches, Thomson-CSF, Orsay, France
  • Volume
    34
  • Issue
    25
  • fYear
    1998
  • fDate
    12/10/1998 12:00:00 AM
  • Firstpage
    2409
  • Lastpage
    2410
  • Abstract
    The growth of a 100 μm thick GaAs layer with antiphase domains (APDs) by hydride vapour phase epitaxy on a diffusion bonded stack as the template substrate is reported. The domains are preserved during the growth with straight and vertical boundaries. Second harmonic generation from a CO2 laser was generated and used to assess the nonlinear efficiency of the template
  • Keywords
    III-V semiconductors; carbon compounds; gallium arsenide; gas lasers; optical harmonic generation; vapour phase epitaxial growth; 100 micron; CO2; GaAs; antiphase domains; diffusion bonded stack; hydride vapour phase epitaxy; nonlinear efficiency; quasi-phase-matched layer; second harmonic generation; straight boundaries; vertical boundaries;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981660
  • Filename
    744016
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1469699