Title :
Second harmonic generation of CO2 laser using thick quasi-phase-matched GaAs layer grown by hydride vapour phase epitaxy
Author :
Becouarn, L. ; Gerard, B. ; Brévignon, M. ; Lehoux, J. ; Gourde, Y. ; Lallier, E.
Author_Institution :
Lab. Central de Recherches, Thomson-CSF, Orsay, France
fDate :
12/10/1998 12:00:00 AM
Abstract :
The growth of a 100 μm thick GaAs layer with antiphase domains (APDs) by hydride vapour phase epitaxy on a diffusion bonded stack as the template substrate is reported. The domains are preserved during the growth with straight and vertical boundaries. Second harmonic generation from a CO2 laser was generated and used to assess the nonlinear efficiency of the template
Keywords :
III-V semiconductors; carbon compounds; gallium arsenide; gas lasers; optical harmonic generation; vapour phase epitaxial growth; 100 micron; CO2; GaAs; antiphase domains; diffusion bonded stack; hydride vapour phase epitaxy; nonlinear efficiency; quasi-phase-matched layer; second harmonic generation; straight boundaries; vertical boundaries;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981660
