Title :
Second-harmonic power extraction from InP Gunn devices with more than 1 mW in 260-320 GHz frequency range
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI, USA
fDate :
12/10/1998 12:00:00 AM
Abstract :
State-of-the-art RF power levels of 1.2 mW and >1 mW in a second-harmonic mode at 280 and 315 GHz, respectively, have been obtained in InP Gunn devices on diamond heatsinks with graded doping profile. Devices with the anode close to the heatsink showed higher oscillation frequencies and better overall performance
Keywords :
Gunn devices; III-V semiconductors; doping profiles; heat sinks; indium compounds; submillimetre wave devices; submillimetre wave generation; 1 to 1.2 mW; 260 to 320 GHz; Gunn device; III-V semiconductors; InP; RF power levels; diamond heatsinks; graded doping profile; oscillation frequencies; second-harmonic power extraction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19981659
