DocumentCode
1469840
Title
Influence of accumulation layer on interface trap density extraction
Author
Sonnenberg, V. ; Martino, J.A.
Author_Institution
Escola Politecnica, Sao Paulo Univ., Brazil
Volume
34
Issue
25
fYear
1998
fDate
12/10/1998 12:00:00 AM
Firstpage
2439
Lastpage
2441
Abstract
The accumulation layer effect in the subthreshold slope of silicon-on-insulator nMOSFETs and in the extraction of the front and back interface trap densities is analysed by simulation. A simple method for minimising this effect is developed and applied experimentally
Keywords
MOSFET; accumulation layers; interface states; semiconductor device models; silicon-on-insulator; accumulation layer; interface trap density; parameter extraction; silicon-on-insulator nMOSFET; simulation; subthreshold slope;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19981678
Filename
744037
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