• DocumentCode
    1469847
  • Title

    Low resistivity layers and Schottky contacts in amorphous silicon by Co+ implantation

  • Author

    Gwilliam, R.M. ; Hutchinson, S. ; Shannon, J.M. ; Emerson, N.G. ; Sealy, B.J.

  • Author_Institution
    Sch. of Electron. Eng. Inf. Technol. & Math., Surrey Univ., Guildford, UK
  • Volume
    34
  • Issue
    25
  • fYear
    1998
  • fDate
    12/10/1998 12:00:00 AM
  • Firstpage
    2441
  • Lastpage
    2442
  • Abstract
    The use of high dose Co+ implantation into hydrogenated amorphous silicon (a-Si:H) deposited on glass has been investigated for the fabrication of low resistivity layers and Schottky devices without the need for high temperature thermal processing. Layer resistivities as low as 10 Ω/□ have been achieved for the as-implanted samples and 3 Ω/□ after annealing at temperatures up to 500°C. Quality Schottky devices have been fabricated for implant doses as low as 1016 Co+ cm-2
  • Keywords
    Schottky barriers; 0 to 500 degC; Schottky contacts; Si:H,Co; amorphous semiconductors; annealing; as-implanted samples; implant doses; low resistivity layers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19981658
  • Filename
    744038
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1469847