• DocumentCode
    1469972
  • Title

    Mid-infrared InSb and InAlSb diode lasers

  • Author

    Ashley, T. ; Beswick, J. ; Elliott, C.T. ; Jefferies, R. ; Johnson, A. ; Pryce, G.

  • Author_Institution
    Defence Evaluation & Res. Agency, Malvern, UK
  • Volume
    145
  • Issue
    5
  • fYear
    1998
  • fDate
    10/1/1998 12:00:00 AM
  • Firstpage
    265
  • Lastpage
    267
  • Abstract
    Diode lasers with an In0.948Al0.052Sb gain region have been grown by molecular beam epitaxy onto nominally matched InGaSb substrates, and onto mismatched InSb substrates. The former had a stimulated emission wavelength of 3.9 μm at 77 K, with the threshold current density being 140 A cm-2 and maximum operating temperature 165 K. The latter had a stimulated emission wavelength of 3.6 μm at 77 K, with the threshold current density being 417 A cm-2 and maximum operating temperature 160 K
  • Keywords
    III-V semiconductors; aluminium compounds; current density; indium compounds; infrared sources; laser transitions; molecular beam epitaxial growth; semiconductor growth; semiconductor lasers; stimulated emission; 160 K; 165 K; 3.9 mum; 77 K; In0.948Al0.052Sb; In0.948Al0.052Sb gain region; InAlSb; InAlSb diode lasers; InGaSb; InSb; maximum operating temperature; mid-IR InSb diode lasers; mismatched InSb substrates; molecular beam epitaxy; nominally matched InGaSb substrates; stimulated emission wavelength; threshold current density;
  • fLanguage
    English
  • Journal_Title
    Optoelectronics, IEE Proceedings -
  • Publisher
    iet
  • ISSN
    1350-2433
  • Type

    jour

  • DOI
    10.1049/ip-opt:19982310
  • Filename
    744058
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1469972