Abstract :
Room temperature LEDs are now being produced by several groups, using all the main growth techniques: MBE, MOVPE and LPE. Room temperature lasing has been achieved in type II W structures and in quantum cascade devices. With demonstration of the first VCSELs in this wavelength range, also operating close to room temperature, the sophistication of device structures now approaches that associated with a mature technology such as GaAs
Keywords :
infrared sources; laser cavity resonators; light emitting diodes; liquid phase epitaxial growth; molecular beam epitaxial growth; optical fabrication; quantum well lasers; semiconductor growth; surface emitting lasers; vapour phase epitaxial growth; IR semiconductor laser device structures; LPE; MBE; MOVPE; VCSELs; main growth techniques; quantum cascade devices; room temperature LEDs; room temperature lasing; semiconductor growth; type II W structures;
