Title :
AlGaAs Schottky reflection modulator and detector for Gbit/s optical transmission systems
Author :
Prank, U. ; Kowalsky, Wolfgang ; Hackbarth, Thomas ; Ebeling, K.J.
Author_Institution :
Inst. fur Hochfrequenztech., Tech. Univ. of Braunschweig, West Germany
fDate :
6/22/1989 12:00:00 AM
Abstract :
An electro-optic reflection modulator operated at incidence normal to the surface is presented attaining a switching contrast of 87:1 up to Gbit/s bit rates. The underlying mechanism is electroabsorption in the multilayered AlGaAs device. Operating the device for photodetection, the authors achieve a responsivity of about 1 A/W.
Keywords :
III-V semiconductors; Schottky-barrier diodes; aluminium compounds; electro-optical devices; gallium arsenide; optical communication equipment; optical modulation; optoelectronic devices; photodetectors; 1 Gbit/s; AlGaAs Schottky reflection modulator; Gbit/s bit rates; Gbit/s optical transmission systems; Schottky reflection detector; electro-optic reflection modulator; electroabsorption; multilayered AlGaAs device; on off ratio; responsivity; semiconductors; switching contrast;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890571
