Abstract :
The characteristics of crossed-film and in-line cryotrons are described and their dependence upon film thickness, operating temperature is discussed. Factors affecting current gain and time-constant are considered. General aspects of cryotron circuits are described, particular attention being paid to cycle time considerations. It is shown how cryotrons may be used in simple logic circuits. Three cryotron storage loops are discussed and it is shown how they may be used in word-organized memories. The advantages of associative memories are pointed out and it is shown how they may be realized by the use of cryotrons, i.e. by combining the logic and memory circuits previously described. The technical feasibility of the use of cryotrons is considered and an attempt is made to assess the outstanding technical problems.
