Title :
High-efficiency pulsed GaAs pin avalanche diodes for V-band oscillators
Author :
Huber, Samuel ; Claassen, M. ; Grothe, H.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotech. und Angewandte Elektronic Tech. Univ. Munchen, West Germany
fDate :
6/22/1989 12:00:00 AM
Abstract :
GaAs pin avalanche diodes have been fabricated for millimetre-wave frequencies using molecular beam epitaxy. The highest obtained pulsed output power was 15 W with 8% efficiency at 50.1 GHz. The maximum observed efficiency was 11.1% at 57.4 GHz and 8.3 W output power.
Keywords :
III-V semiconductors; avalanche diodes; gallium arsenide; microwave generation; microwave oscillators; molecular beam epitaxial growth; p-i-n diodes; solid-state microwave devices; 50.1 to 57.4 GHz; 8 to 11 percent; 8.3 to 15 W; EHF; GaAs pin avalanche diodes; MBE; V-band oscillators; efficiency; millimetre-wave frequencies; molecular beam epitaxy; p-i-n avalanche diodes; pulsed operation; pulsed output power; semiconductors;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19890576
