DocumentCode :
1470463
Title :
Characterization of Lead-Free Solder and Sintered Nano-Silver Die-Attach Layers Using Thermal Impedance
Author :
Cao, Xiao ; Wang, Tao ; Ngo, Khai D T ; Lu, Guo-Quan
Author_Institution :
Dept. of Electr. & Comput. Eng., Virginia Polytech. Inst. & State Univ., Blacksburg, VA, USA
Volume :
1
Issue :
4
fYear :
2011
fDate :
4/1/2011 12:00:00 AM
Firstpage :
495
Lastpage :
501
Abstract :
Since a die-attach layer has a significant impact on the thermal performance of a power module, its quality can be characterized using thermal performance. In this paper, a measurement system for thermal impedance is developed to evaluate three die-attach materials. Thanks to its high temperature sensitivity (10 mV/°C), the gate-emitter voltage of an insulated gate bipolar transistor (IGBT) is used as the temperature-sensitive parameter. The power dissipation in the IGBT remains constant by a feedback loop, regardless of the junction temperature. Experimental results show that the sample using sintered nano-silver for the die-attach has 12.1% lower thermal impedance than the samples using SAC305 and SN100C solders. To check the degradation of the die-attachment, six samples using three die-attach materials were thermally cycled from -40 to 125°C. The experimental results show that, after 500 cycles, the thermal impedance of SAC305 samples and SN100C samples is increased by 12.9% and 13.3%, respectively, which are much higher than that of the sample using the sintered nano-silver for the die-attach (3.1%).
Keywords :
insulated gate bipolar transistors; silver; sintering; solders; thermal analysis; SAC305 solders; SN100C solders; feedback loop; gate-emitter voltage; insulated gate bipolar transistor; junction temperature; lead-free solder; sintered nano-silver die-attach layers; temperature -40 degC to 125 degC; temperature sensitivity; thermal impedance; thermal performance; Heating; Impedance; Impedance measurement; Insulated gate bipolar transistors; Logic gates; Semiconductor device measurement; Temperature measurement; Die-attach; lead-free solder; power insulated gate bipolar transistor; sintered nano-silver; thermal cycling; thermal impedance measurement;
fLanguage :
English
Journal_Title :
Components, Packaging and Manufacturing Technology, IEEE Transactions on
Publisher :
ieee
ISSN :
2156-3950
Type :
jour
DOI :
10.1109/TCPMT.2011.2104958
Filename :
5729793
Link To Document :
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