• DocumentCode
    1470474
  • Title

    Abrupt high hole concentration profiles in GaAs by Zn+P dual implantation

  • Author

    Sealy, B.J. ; Rezazadeh, Alireza

  • Volume
    25
  • Issue
    13
  • fYear
    1989
  • fDate
    6/22/1989 12:00:00 AM
  • Firstpage
    861
  • Lastpage
    863
  • Abstract
    Reports that through the use of rapid thermal annealing (RTA) and the coimplantation of phosphorus an effective way of preventing the in-diffusion of zinc has been achieved. The authors have observed that the electrical activation characteristics of the Zn-implanted samples have been modified after the coimplantation of phosphorous. Furthermore, abrupt electrical profiles with hole concentrations of the order of 6*1019/cm3 have been achieved after annealing at 850 degrees C for 30 s.
  • Keywords
    III-V semiconductors; annealing; doping profiles; gallium arsenide; ion implantation; phosphorus; semiconductor doping; zinc; 30 s; 850 C; GaAs:Zn,P; RTA; abrupt electrical profiles; abrupt high hole concentration profiles; coimplantation; dual implantation; electrical activation characteristics; hole concentrations; ion implantation; rapid thermal annealing;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19890580
  • Filename
    91807
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1470474