Abrupt high hole concentration profiles in GaAs by Zn+P dual implantation

Reports that through the use of rapid thermal annealing (RTA) and the coimplantation of phosphorus an effective way of preventing the in-diffusion of zinc has been achieved. The authors have observed that the electrical activation characteristics of the Zn-implanted samples have been modified after the coimplantation of phosphorous. Furthermore, abrupt electrical profiles with hole concentrations of the order of 6*10¹⁹/cm³ have been achieved after annealing at 850 degrees C for 30 s.