Title :
Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz
Author :
Schleeh, J. ; Alestig, G. ; Halonen, J. ; Malmros, A. ; Nilsson, B. ; Nilsson, P.A. ; Starski, J.P. ; Wadefalk, N. ; Zirath, H. ; Grahn, J.
Author_Institution :
Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Göteborg, Sweden
fDate :
5/1/2012 12:00:00 AM
Abstract :
We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low-noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise temperature of 1.2 K ± 1.3 K at 5.2 GHz was measured. The gain of the amplifier across the entire band was 44 dB, consuming only 4.2 mW of dc power. The extracted minimum noise temperature of the InP HEMT was 1 K at 6 GHz.
Keywords :
III-V semiconductors; aluminium compounds; cryogenics; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; low-power electronics; InGaAs-InAlAs-InP; cryogenic low-noise operation; dc power dissipation; frequency 4 GHz to 8 GHz; gain 44 dB; gate current; high-electron-mobility transistor; minimum noise temperature; parasitic contact; power 4.2 mW; record noise temperature; sheet resistances; size 130 nm; temperature 1 K; temperature 10 K; three-stage hybrid low-noise amplifier; ultralow-power cryogenic HEMT; Cryogenics; Gain; HEMTs; Indium phosphide; Logic gates; Noise; Cryogenic; InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT); low noise; low power;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2187422
