Ultralow-Power Cryogenic InP HEMT With Minimum Noise Temperature of 1 K at 6 GHz

Author

Schleeh, J. ; Alestig, G. ; Halonen, J. ; Malmros, A. ; Nilsson, B. ; Nilsson, P.A. ; Starski, J.P. ; Wadefalk, N. ; Zirath, H. ; Grahn, J.

Author_Institution

Dept. of Microtechnol. & Nanosci. (MC2), Chalmers Univ. of Technol., Göteborg, Sweden

Volume

33

Issue

5

fYear

2012

fDate

5/1/2012 12:00:00 AM

Firstpage

664

Lastpage

666

Abstract

We present in this letter an InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT) with record noise temperature at very low dc power dissipation. By minimizing parasitic contact and sheet resistances and the gate current, a 130-nm-gate-length InP HEMT was optimized for cryogenic low-noise operation. When integrated in a 4- to 8-GHz three-stage hybrid low-noise amplifier operating at 10 K, a noise temperature of 1.2 K ± 1.3 K at 5.2 GHz was measured. The gain of the amplifier across the entire band was 44 dB, consuming only 4.2 mW of dc power. The extracted minimum noise temperature of the InP HEMT was 1 K at 6 GHz.

Keywords

III-V semiconductors; aluminium compounds; cryogenics; gallium arsenide; high electron mobility transistors; indium compounds; low noise amplifiers; low-power electronics; InGaAs-InAlAs-InP; cryogenic low-noise operation; dc power dissipation; frequency 4 GHz to 8 GHz; gain 44 dB; gate current; high-electron-mobility transistor; minimum noise temperature; parasitic contact; power 4.2 mW; record noise temperature; sheet resistances; size 130 nm; temperature 1 K; temperature 10 K; three-stage hybrid low-noise amplifier; ultralow-power cryogenic HEMT; Cryogenics; Gain; HEMTs; Indium phosphide; Logic gates; Noise; Cryogenic; InGaAs/InAlAs/InP high-electron-mobility transistor (InP HEMT); low noise; low power;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2012.2187422

Filename

6170540