Title :
CMOS Process-Compatible High-Power Low-Leakage AlGaN/GaN MISHEMT on Silicon
Author :
Van Hove, Marleen ; Boulay, Sanae ; Bahl, Sandeep R. ; Stoffels, Steve ; Kang, Xuanwu ; Wellekens, Dirk ; Geens, Karen ; Delabie, Annelies ; Decoutere, Stefaan
Author_Institution :
Interuniv. Microelectron. Center, Leuven, Belgium
fDate :
5/1/2012 12:00:00 AM
Abstract :
We report on a novel Au-free CMOS process-compatible process for AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors. The process starts from a 150-mm GaN-on-Si substrate with an embedded Si3N4/Al2O3 bilayer gate dielectric, encapsulated by a high-temperature low-pressure chemical vapor deposited nitride layer. Power devices with a 20-mm gate width reach a maximum output current of 8 A, a breakdown voltage of 750 V, and a specific on-resistance Ron, sp of 2.9 mΩ·cm2. The off-state drain leakage at 600 V is 7 μA. We show robust gate dielectrics with a large gate bias swing.
Keywords :
CMOS integrated circuits; III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; wide band gap semiconductors; AlGaN-GaN; CMOS process-compatible high-power low-leakage MISHEMT; CMOS process-compatible process; GaN-on-Si substrate; Si3N4-Al2O3; bilayer gate dielectric; high-temperature low-pressure chemical vapor deposited nitride layer; metal-insulator-semiconductor high-electron-mobility transistors; off-state drain leakage; power devices; robust gate dielectrics; silicon; Aluminum gallium nitride; Aluminum oxide; Dielectrics; Gallium nitride; Leakage current; Logic gates; Silicon; Au free; GaN on Si; gate dielectric; high voltage; metal–insulator–semiconductor high-electron-mobility transistor (MISHEMT);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2012.2188016
