Title :
Single-Crystalline Si STacked ARray (STAR) NAND Flash Memory
Author :
Yun, Jang-Gn ; Kim, Garam ; Lee, Joung-Eob ; Kim, Yoon ; Shim, Won Bo ; Lee, Jong-Ho ; Shin, Hyungcheol ; Lee, Jong Duk ; Park, Byung-Gook
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Suwon, South Korea
fDate :
4/1/2011 12:00:00 AM
Abstract :
In this paper, a 3-D NAND Flash memory array having multiple single-crystal Si nanowires is investigated. Device structure and fabrication process are described including the electrical isolation of stacked nanowires. Numerical simulation results focused on NAND Flash memory operation are delivered. Devices and array with stacked bit lines are fabricated, and memory characteristics such as program/erase select gate operation are measured. Array scheme is also discussed for the high-density bit-cost scalable 3-D stacked bit-line NAND Flash memory application.
Keywords :
NAND circuits; elemental semiconductors; flash memories; nanowires; semiconductor growth; silicon; 3D NAND Flash memory array; STAR NAND flash memory; silicon nanowires; single-crystalline silicon stacked array; Arrays; Flash memory; Logic gates; Nanowires; Silicon; Silicon germanium; Damascene gate process; layer replacement and single-crystal Si nanowire; nand Flash memory; stacked bit lines; three-dimensional (3-D) memory;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2107557
