Title :
Nano-ampere PTAT current source with temperature inaccuracy <±1°C
Author :
Chouhan, S.S. ; Halonen, Kari
Author_Institution :
Sch. of Electr. Eng., Dept. of Micro & Nano Sci., Aalto Univ., Espoo, Finland
Abstract :
The architecture for generating a nano-ampere proportional to absolute temperature (PTAT) current source is proposed. The circuit has been designed and fabricated in a standard 180 nm CMOS technology. Measurements were performed on 10 prototypes in the temperature range of -40 to +85°C. The operating supply voltage of the proposed circuit is 850 mV ± 10%. The measured averaged temperature inaccuracy and the linearity of the proposed architecture is between +0.86/- 0.93°C and +0.69/-0.75%, respectively.
Keywords :
CMOS integrated circuits; constant current sources; integrated circuit packaging; nanoelectronics; thermal management (packaging); CMOS technology; nano-ampere PTAT current source; proportional to absolute temperature; size 180 nm; temperature -40 C to 85 C; temperature inaccuracy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el.2014.3610
