Title :
Experimental evaluation of microwave field-effect-transistor noise models
Author :
Heymann, Peter ; Rudolph, Matthias ; Prinzler, Helmut ; Doerner, Ralf ; Klapproth, Lars ; Bock, Georg
Author_Institution :
Microwave Dept., Ferdinand-Braun-Inst. fur Hochfrequenztech., Berlin, Germany
fDate :
2/1/1999 12:00:00 AM
Abstract :
Extensive GaAs field-effect-transistor noise measurements are used to compare noise models with the aim of recommending the most useful one for monolithic-microwave integrated-circuit design. The evaluation is based on noise and S-parameter measurements of metal-semiconductor field-effect transistors and high electron-mobility transistors with different gatewidths in the frequency range of 0.05-26 GHz. The models under investigation differ in the number of independent coefficients necessary to calculate the four noise parameters of the device. The broad frequency range including radio-frequency frequencies down to 50 MHz requires two different noise measurement systems with special modifications for optimum performance. In conclusion, the two-parameter Pospieszalski model turns out to be the most suitable one
Keywords :
III-V semiconductors; S-parameters; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; high electron mobility transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 0.05 to 26 GHz; FET noise measurements; GaAs; MMIC design; Pucel model; S-parameter measurements; high electron-mobility transistors; metal-semiconductor field-effect transistors; microwave FET noise models; noise equivalent circuit; optimum performance; parameter extraction; two-parameter Pospieszalski model; two-port method; Circuit noise; Equivalent circuits; Frequency measurement; Gallium arsenide; HEMTs; MODFETs; Microwave FETs; Microwave devices; Noise figure; Noise measurement;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
