Monolithic integration of GaAs-AlGaAs quantum-well lasers with directional couplers using vertical coupling of light

Author

Boche, B. ; Müller, R. ; Böhm, G. ; Tränkle, G. ; Weimann, G.

Author_Institution

Lehrstuhl fur Tech. Elektronik, Tech. Univ. Munchen, Germany

Volume

8

Issue

12

fYear

1996

Firstpage

1591

Lastpage

1593

Abstract

A novel technique for the monolithic integration of a laser and a directional coupler in the GaAs-AlGaAs material system is demonstrated. The combination of single-step molecular beam epitaxy (MBE) on a planar substrate, vertical coupling of light between the active and passive waveguide in a p-n-p-doped structure and the use of a self-aligned fabrication process for the ridge waveguides in the active and passive sections results in a threshold current of 52 mA and an output power of up to 0.6 mW. The directional coupler is completely switched at an applied bias of 4.0 V.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; integrated optoelectronics; molecular beam epitaxial growth; optical couplers; optical directional couplers; optical fabrication; optical planar waveguides; quantum well lasers; ridge waveguides; semiconductor doping; semiconductor growth; waveguide lasers; 0.6 mW; 4 V; 52 mA; GaAs-AlGaAs; GaAs-AlGaAs material system; GaAs-AlGaAs quantum-well lasers; MBE; active waveguide; applied bias; directional coupler; directional couplers; monolithic integration; output power; p-n-p-doped structure; passive waveguide; planar substrate; self-aligned fabrication process; single-step molecular beam epitaxy; threshold current; vertical light coupling; Directional couplers; Molecular beam epitaxial growth; Monolithic integrated circuits; Optical coupling; Optical device fabrication; Optical materials; Planar waveguides; Quantum well lasers; Substrates; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.544687

Filename

544687